Large area optical quality synthetic polycrystalline diaond window

ABSTRACT

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm −1  at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10 −4 .

FIELD OF INVENTION

The present invention relates to the fabrication of optical qualitysynthetic polycrystalline diamond windows using a chemical vapourdeposition (CVD) technique.

BACKGROUND OF INVENTION

Chemical vapour deposition (CVD) processes for synthesis of diamondmaterial are now well known in the art. Useful background informationrelating to the chemical vapour deposition of diamond materials may befound in a special issue of the Journal of Physics: Condensed Matter,Vol. 21, No. 36 (2009) which is dedicated to diamond related technology.For example, the review article by R. S Balmer et al. gives acomprehensive overview of CVD diamond materials, technology andapplications (see “Chemical vapour deposition synthetic diamond:materials, technology and applications” J. Phys.: Condensed Matter, Vol.21, No. 36 (2009) 364221).

Being in the region where diamond is metastable compared to graphite,synthesis of diamond under CVD conditions is driven by surface kineticsand not bulk thermodynamics. Diamond synthesis by CVD is normallyperformed using a small fraction of carbon (typically <5%), typically inthe form of methane although other carbon containing gases may beutilized, in an excess of molecular hydrogen. If molecular hydrogen isheated to temperatures in excess of 2000 K, there is a significantdissociation to atomic hydrogen. In the presence of a suitable substratematerial, synthetic diamond material can be deposited.

Atomic hydrogen is essential to the process because it selectivelyetches off non-diamond carbon from the substrate such that diamondgrowth can occur. Various methods are available for heating carboncontaining gas species and molecular hydrogen in order to generate thereactive carbon containing radicals and atomic hydrogen required for CVDdiamond growth including arc-jet, hot filament, DC arc, oxy-acetyleneflame, and microwave plasma.

Methods that involve electrodes, such as DC arc plasmas, can havedisadvantages due to electrode erosion and incorporation of materialinto the diamond. Combustion methods avoid the electrode erosion problembut are reliant on relatively expensive feed gases that must be purifiedto levels consistent with high quality diamond growth. Also thetemperature of the flame, even when combusting oxy-acetylene mixes, isinsufficient to achieve a substantial fraction of atomic hydrogen in thegas stream and the methods rely on concentrating the flux of gas in alocalized area to achieve reasonable growth rates. Perhaps the principalreason why combustion is not widely used for bulk diamond growth is thecost in terms of kWh of energy that can be extracted. Compared toelectricity, high purity acetylene and oxygen are an expensive way togenerate heat. Hot filament reactors while appearing superficiallysimple have the disadvantage of being restricted to use at lower gaspressures which are required to ensure relatively effective transport oftheir limited quantities of atomic hydrogen to a growth surface.

In light of the above, it has been found that microwave plasma is themost effective method for driving CVD diamond deposition in terms of thecombination of power efficiency, growth rate, growth area, and purity ofproduct which is obtainable.

A microwave plasma activated CVD diamond synthesis system typicallycomprises a plasma reactor vessel coupled both to a supply of sourcegases and to a microwave power source. The plasma reactor vessel isconfigured to form a resonance cavity supporting a standing microwave.Source gases including a carbon source and molecular hydrogen are fedinto the plasma reactor vessel and can be activated by the standingmicrowave to form a plasma in high field regions. If a suitablesubstrate is provided in close proximity to the plasma, reactive carboncontaining radicals can diffuse from the plasma to the substrate and bedeposited thereon. Atomic hydrogen can also diffuse from the plasma tothe substrate and selectively etch off non-diamond carbon from thesubstrate such that diamond growth can occur.

A range of possible microwave plasma reactors for synthetic diamond filmgrowth using a CVD process are known in the art. Such reactors have avariety of different designs. Common features include: a plasma chamber;a substrate holder disposed in the plasma chamber; a microwave generatorfor forming the plasma; a coupling configuration for feeding microwavesfrom the microwave generator into the plasma chamber; a gas flow systemfor feeding process gases into the plasma chamber and removing themtherefrom; and a temperature control system for controlling thetemperature of a substrate on the substrate holder.

A useful overview article by Silva et al. summarizing various possiblereactor designs is given in the previous mentioned Journal of Physics(see “Microwave engineering of plasma-assisted CVD reactors for diamonddeposition” J. Phys.: Condens. Matter, Vol. 21, No. 36 (2009) 364202).Having regard to the patent literature, U.S. Pat. No. 6,645,343(Fraunhofer) discloses an example of a microwave plasma reactorconfigured for diamond film growth via a chemical vapour depositionprocess. The reactor described therein comprises a cylindrical plasmachamber with a substrate holder mounted on a base thereof. A coolingdevice is provided below the substrate holder for controlling thetemperature of a substrate on the substrate holder. Furthermore, a gasinlet and a gas outlet are provided in the base of the plasma chamberfor supplying and removing process gases. A microwave generator iscoupled to the plasma chamber via a high-frequency coaxial line which issubdivided at its delivery end above the plasma chamber and directed atthe periphery of the plasma chamber to an essentially ring-shapedmicrowave window in the form of a quartz ring mounted in a side wall ofthe plasma chamber.

Using microwave plasma reactors such as those disclosed in the prior artit is possible to grow polycrystalline diamond wafers by chemical vapourdeposition on a suitable substrate such as a silicon wafer or a carbideforming refractory metal disk. Such polycrystalline CVD diamond wafersare generally opaque in their as-grown form but can be made transparentby polishing opposing faces of the wafers to produce transparentpolycrystalline diamond windows for optical applications.

Diamond material is useful as an optical component as it has a broadoptical transparency from ultraviolet through to infrared. Diamondmaterial has the additional advantage over other possible windowmaterials in that it is mechanically strong, inert, and biocompatible.For example, the inertness of diamond material makes it an excellentchoice for use in reactive chemical environments where other opticalwindow materials would not be suitable. Further still, diamond materialhas very high thermal conductivity and a low thermal expansioncoefficient. As such, diamond material is useful as an optical componentin high energy beam applications where the component will tend to beheated. The diamond material will rapidly conduct away heat to coolareas where heating occurs so as to prevent heat build-up at aparticular point, e.g. where a high energy beam passes through thematerial. To the extent that the material is heated, the low thermalexpansion coefficient of diamond material ensures that the componentdoes not unduly deform which may cause optical and/or mechanicalproblems in use.

One problem with fabricating polycrystalline CVD diamond opticalcomponents is that during the CVD growth process defects and/orimpurities such as nitrogen, silicon and non-diamond carbon areincorporated into the diamond material as discussed below.

Atmospheric nitrogen is generally present as an impurity within sourceprocess gases and may also be present as a residual impurity within CVDreactor components due, for example, to non-perfect vacuum seals and/orresidual defects and/or impurities adsorbed onto interior surfaces ofthe CVD reactor which may desorb during use. Furthermore, nitrogen gasis often intentionally introduced into the CVD synthesis atmosphereduring a synthetic diamond growth process as it is known that nitrogenincreases the growth rate of synthetic diamond material. While nitrogenis advantageous for achieving commercially useful growth rates,incorporation of nitrogen into the synthetic diamond material candetrimentally affect the optical and thermal performance characteristicsof the material. Accordingly, a balance may be struck between providingsufficient nitrogen within the CVD synthesis atmosphere to achieveacceptable growth rates while limiting the quantity of nitrogen which isincorporated into the solid CVD diamond material being grown. Apparatusand process conditions can affect the rate at which nitrogen within theCVD synthesis atmosphere is incorporated into the solid CVD diamondmaterial being grown.

Silicon defects and/or impurities may come from silicon based componentswithin the CVD reactor. For example, quartz windows or bell jars areoften used to couple microwaves into the plasma chamber and/or constrainplasma and process gases near a substrate growth surface to achieve CVDdiamond growth. Such silicon containing quartz components are exposed toextreme temperatures from the plasma in use and this can result insilicon from these components being incorporated into the syntheticdiamond material. Apparatus and process conditions can affect the rateat which silicon is incorporated into the solid CVD diamond materialbeing grown.

Non-diamond carbon (e.g. sp2 hybridized graphitic carbon) is inevitablydeposited on the growth surface of the substrate during CVD diamondgrowth processes. As previously described, atomic hydrogen is essentialto a CVD diamond growth process because it selectively etches offnon-diamond carbon from the substrate such that diamond growth canoccur. However, this selective etching process does not usually removeall the deposited non-diamond carbon and such material therefore becomesincorporated into the CVD diamond material forming defects. Apparatusand process conditions can affect the rate at which non-diamond carbonis incorporated into the solid CVD diamond material being grown.

In light of the above, it is evident that the apparatus configurationand process conditions must be carefully selected and controlled inorder to ensure that the level of defects and/or impurities incorporatedinto the synthetic diamond material during CVD growth are extremelysmall for high performance optical components.

In addition to control of absolute impurity levels, it is also criticalto ensure that the uniformity of impurity uptake is controlled so as toachieve a product which has consistent performance characteristics.Uniformity is an issue in terms of spatial variations in the rate ofimpurity uptake across a growth surface and temporal variations in therate of impurity uptake over a growth run. For example, a non-uniformdistribution of physical and/or chemical process parameters over thegrowth surface can lead to spatial variations in the rate of impurityuptake across a synthetic polycrystalline diamond wafer. Furthermore, asa synthetic polycrystalline diamond wafer grows, grains increase in sizeas do boundaries between the grains within the synthetic polycrystallinediamond wafer. An increase in the size of grains and grain boundaries asthe synthetic polycrystalline diamond wafer grows thicker leads to anincrease in the rate of defect and/or impurity uptake within theenlarged grain boundaries which can result in an increasingconcentration of defects and/or defects and/or impurities through thethickness of a synthetic polycrystalline diamond wafer.

In addition to the above described problems, variations in growth rateacross a synthetic polycrystalline diamond wafer can lead to variationsin impurity uptake. For example, as the growth rate increases the timeavailable to etch non-diamond carbon from the growth surface before itis encapsulated within the synthetic polycrystalline diamond waferdecreases. Furthermore, variations in growth rate also cause variationsin thickness which can lead to strain and cracking of syntheticpolycrystalline diamond wafer on cooling after completion of the CVDgrowth process. Variations in growth rate can be caused bynon-uniformities in the plasma across the growth surface andnon-uniformities in the temperature of the substrate on which thesynthetic polycrystalline diamond wafer is grown.

Despite the above problems, to date it has been possible to fabricatehigh optical quality polycrystalline diamond wafer up to approximately100 mm in diameter and 1 mm in thickness. However, the production oflarger and/or thicker polycrystalline diamond wafers of high opticalquality has proved problematic. While it has been possible to fabricatelarger and/or thicker polycrystalline diamond wafers, these have been oflower optical quality, particularly towards the periphery of the wafers.Such wafers do not meet the requirements for certain commercialapplications which require relatively thick, relatively large diametersynthetic polycrystalline diamond windows of extremely high opticalquality. For example, certain very high powered laser beam applicationsrequire >70 mm diameter, >1.3 mm thick clear aperture, optical grade,polycrystalline diamond laser windows capable of handling the extremepower densities involved. Polycrystalline diamond laser windows with therelevant optical properties are available in smaller sizes andthicknesses. However these sizes and thicknesses are not high enough forcertain applications. Such polycrystalline diamond windows are alsorequired for use as radiation resistant windows.

It is an aim of certain embodiments of the present invention to providea suitable microwave plasma reactor configuration and suitable CVDprocess conditions in order to fabricate thick (e.g. at least 1.3 mm)large (e.g. at least 70 mm diameter) synthetic polycrystalline diamondwindows having extremely high optical quality across substantially all(e.g. across at least 70%) of the window area.

SUMMARY OF INVENTION

According to a first aspect of the present invention there is provided apolycrystalline chemical vapour deposited (CVD) diamond wafercomprising:

-   -   a largest linear dimension equal to or greater than 70 mm;    -   a thickness equal to or greater than 1.3 mm; and    -   one or both of the following characteristics measured at room        temperature (nominally 298 K) over at least a central area of        the polycrystalline CVD diamond wafer, said central area being        circular, centred on a central point of the polycrystalline CVD        diamond wafer, and having a diameter of at least 70% of the        largest linear dimension of the polycrystalline CVD diamond        wafer:    -   (1) an absorption coefficient ≦0.2 cm⁻¹ at 10.6 μm; and    -   (2) a dielectric loss coefficient at 145 GHz, of tan δ≦2×10⁻⁴.

Preferably, the polycrystalline CVD diamond wafer further comprises oneor more of the following structural characteristics over at least thecentral area:

-   -   (3) a tensile rupture strength with a nucleation face of the        polycrystalline CVD diamond wafer in tension of: ≧760 MPa×n for        a thickness of 200 to 500 μm; ≧700 MPa×n for a thickness of 500        to 750 μm; ≧650 MPa×n for a thickness of 750 to 1000 μm; ≧600        MPa×n for a thickness of 1000 to 1250 μm; ≧550 MPa×n for a        thickness of 1250 to 1500 μm; ≧500 MPa×n for a thickness of 1500        to 1750 μm; ≧450 MPa×n for a thickness of 1750 to 2000 μm; or        ≧400 MPa×n for a thickness of ≧2000 μm, wherein multiplying        factor n is 1.0, 1.1, 1.2, 1.4, 1.6, 1.8, or 2;    -   (4) a tensile rupture strength with a growth face of the        polycrystalline CVD diamond wafer in tension of ≧330 MPa×n for a        thickness of 200 to 500 μm; ≧300 MPa×n for a thickness of 500 to        750 μm; ≧275 MPa×n for a thickness of 750 to 1000 μm; ≧250 MPa×n        for a thickness of 1000 to 1250 μm; ≧225 MPa×n for a thickness        of 1250 to 1500 μm; ≧200 MPa×n for a thickness of 1500 to 1750        μm; ≧175 MPa×n for a thickness of 1750 to 2000 μm; or ≧150 MPa×n        for a thickness of ≧2000 μm, wherein multiplying factor n is 1.0        1.1, 1.2, 1.4, 1.6, 1.8, or 2; and    -   (5) a surface flatness ≦5 μm, ≦4 μm, ≦3 μm, ≦2 μm, ≦1 μm, ≦0.5        μm, ≦0.2 μm, ≦ or 0.1 μm.

Preferably, the polycrystalline CVD diamond wafer further comprises oneor more of the following characteristics over at least the central area:

-   -   (6) an average black spot density no greater than 1 mm⁻², 0.5        mm⁻², or 0.1 mm⁻²;    -   (7) a black spot distribution such that there are no more than        4, 3, 2, or 1 black spots within any 3 mm² area;    -   (8) an integrated absorbance per unit thickness of no more than        0.20 cm⁻², 0.15 cm⁻², 0.10 cm⁻², or 0.05 cm⁻², when measured        with a corrected linear background in a range 2760 cm⁻¹ to 3030        cm⁻¹;    -   (9) a thermal conductivity of no less than 1900 Wm⁻¹K⁻¹, 2000        Wm⁻¹K⁻¹, 2100 Wm⁻¹K⁻¹, or 2200 Wm⁻¹K⁻¹;    -   (10) a total integrated scatter in a forward hemisphere no more        than 1%, 0.5%, or 0.1% at 10.6 μm for a sample thickness of 0.7        mm with front and rear surfaces polished to a root mean squared        roughness of less than 15 nm; and    -   (11) a silicon concentration as measured by secondary ion mass        spectrometry of no more than 10¹⁷ cm⁻³, 5×10¹⁶ cm⁻³, 10¹⁶ cm⁻³,        5×10¹⁵ cm⁻³, or 10¹⁵ cm⁻³.

Embodiments may comprise any combination of the aforementioned preferredcharacteristics. However, of the eleven recited characteristics givenabove, the polycrystalline CVD diamond wafer preferably comprises two,three, four, five, six, seven, eight, nine, ten, or most preferably alleleven of said characteristics.

Certain embodiments of the present invention have been realized by: (i)developing a particular microwave plasma reactor configuration; (ii)further modifying the microwave plasma reactor configuration toextremely precise design tolerances; and (iii) developing suitableprocess conditions for operating the microwave plasma reactorconfiguration to achieve fabrication of large synthetic polycrystallinediamond windows having extremely high optical quality.

Having regard to point (i), the microwave plasma reactor is configuredto couple both process gas, via one or more gas inlet nozzles, andmicrowaves, via an annular dielectric window, through a top plate of theplasma chamber towards a suitably temperature controlled substratemounted in a base of the plasma chamber such that both process gas andmicrowaves are coupled into the plasma chamber in a rotationallysymmetric manner and directed towards the substrate growth surface. Sucha configuration has been found to be useful in allowing high gas flowrates, high process pressures, and high microwave power processconditions to be used for achieving good quality synthetic diamondgrowth at high growth rates with a suitably controlled nitrogenconcentration. Furthermore, the provision of an annular dielectricwindow around a peripheral region of the top plate of the plasma chambercan reduce silicon transfer into the synthetic diamond material duringgrowth when compared with alternatives such as the use of a bell jar,the use of a window spanning across a central portion of the plasmachamber, or an annular dielectric window disposed in a side wall of theplasma chamber, all of which increase exposure of the dielectric windowmaterial to a plasma region within the chamber.

Having regard to point (ii), it has been found that even utilizing sucha configuration it is difficult to fabricate very large area (e.g. ≧125mm diameter) windows of synthetic polycrystalline diamond havingextremely high optical quality and no cracking. This problem has beentraced to very minor misalignments in the microwave couplingconfiguration, the gas delivery system, and the substrate mounting andtemperature control systems relative to the central rotational axis ofsymmetry of the plasma chamber. While minor misalignments do notmanifest themselves in terms of a significant reduction in the qualityof synthetic diamond material grown over smaller areas, it has beenfound that when fabricating synthetic diamond material over larger areas(e.g. ≧125 mm diameter) even very minor misalignments between componentscan detrimentally affect material quality, particularly around aperipheral region of the synthetic polycrystalline diamond wafer. Assuch, it has been found that the components, particularly the annulardielectric window, should be rotationally symmetric with each componenthaving a rotational axis of symmetry lying within 0.2 mm of a centralrotational axis of symmetry of the resonance cavity. Preferably othercomponents such as the substrate holder and the one or more gas inletnozzles should also be precisely configured and aligned. Such precisealignment, in combination with the previously described configuration inwhich process gas and microwaves are both coupled into the plasmachamber in an axial direction towards the substrate growth surface,allows high gas flow rates and high microwave power conditions to beachieved with a high degree of rotational symmetry which has been foundto be critical for achieving the fabrication of large area, thickwindows of synthetic polycrystalline diamond having extremely highoptical quality.

Having regard to point (iii), it has been found that even utilizing thepreviously described precisely-aligned microwave plasma reactorconfiguration, the quality of polycrystalline diamond material around aperipheral region of the polycrystalline diamond wafer may not meetextremely high optical quality requirements. In particular, levels ofimpurities and/or defects such as non-diamond carbon have been found toincrease at a peripheral region of larger area wafers. This problem isexacerbated when also growing to larger thicknesses because as asynthetic polycrystalline diamond wafer grows, grain boundaries increasein size and this leads to an increase in the rate of impurity uptakewithin the grain boundaries. It has been found that this problem can bealleviated by increasing the pressure, power, and hydrogen gas flowrate. It is considered that the concentration of atomic hydrogenavailable to selectively etch off non-diamond carbon from the substrateis lower at very large diameters and thus the efficiency of non-diamondcarbon etching is reduced. It is believed that increasing the hydrogengas flow rate directed towards the growth surface pushes more atomichydrogen to peripheral regions of the polycrystalline diamond wafer thusincreasing the rate at which non-diamond carbon is etched from thegrowth surface and improving the quality of the material in peripheralregions of the growing wafer. Increasing the power and pressure alsoaids in increasing the atomic hydrogen flux from the plasma to thegrowth surface. An alternative or additional solution is to provide agas inlet nozzle array having a plurality of gas inlet nozzles directedtowards the growth surface of the substrate and disposed over an areasufficiently large to ensure that a sufficiently large concentration ofatomic hydrogen is provided in peripheral regions of a polycrystallinediamond wafer during growth. Yet another alternative or additionalsolution is to reduce the growth rate of the polycrystalline CVD diamondwafer to allow more time for non-diamond carbon to be etched from thegrowth surface. For example, the growth rate may be decreased as athickness of the polycrystalline CVD diamond wafer increases by, forexample, reducing the atomic concentration of carbon and/or the atomicconcentration of nitrogen during growth of the polycrystalline CVDdiamond wafer on the substrate.

By combining developments in reactor design, engineering tolerancecontrol, and process design it has been possible to achieve fabricationof large synthetic polycrystalline diamond windows having extremely highoptical quality.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the present invention and to show how thesame may be carried into effect, embodiments of the present inventionwill now be described by way of example only with reference to theaccompanying drawings, in which:

FIG. 1 illustrates a microwave plasma reactor configured to fabricatelarge area optical quality polycrystalline CVD diamond wafers;

FIGS. 2( a), 2(b) and 3 illustrate components of a microwave couplingconfiguration for coupling microwaves into a plasma chamber;

FIGS. 4( a) to 4(c) show electric field profile plots for varyingheights of substrate within a microwave plasma reactor;

FIGS. 5( a) to 5(c) show how the height of the growth surface of thesubstrate is calculated relative to a mean height of a surfacesurrounding the substrate;

FIGS. 6( a) and 6(b) illustrate a large area optical qualitypolycrystalline CVD diamond wafer; and

FIG. 7 illustrates four 20 mm diameter test samples extracted for lasercalorimetry measurement from a parent wafer of 140 mm diameter accordingto an embodiment of the present invention.

DETAILED DESCRIPTION

The microwave plasma reactor illustrated in FIG. 1 comprises thefollowing components: a plasma chamber 2; a substrate holder 4; asubstrate 5; a microwave generator 6; plasma 8 generated in use forgrowing a polycrystalline CVD diamond wafer 9 having a nucleation face9′ and a growth face 9″; a microwave coupling configuration 10;dielectric window 12; source gas container system 14; one or more gasinlets 16; one or more gas outlets 18; spacer wires or spacer pads 20 todefine a gas gap 22 between a supporting surface of the substrate holder4 and a rear surface of the substrate 5; and a substrate temperaturecontrol arrangement comprising a gas supply system 24 coupled to the gasgap 22 via a supply pipe 26, and a coolant liquid supply system 28 forcooling the substrate holder.

The microwave plasma reactor can be considered to comprise threesubsystems: (A) gas and microwave delivery systems configured to deliverprocess gases and microwaves into a plasma chamber through a top plateof the plasma chamber; (B) a plasma chamber comprising a base, a topplate, and a side wall extending from the base to the top plate defininga resonance cavity for supporting a microwave resonance mode, theresonance cavity comprising a central rotational axis of symmetry Sextending from the base to the top plate; and (C) a substrate mountingconfiguration comprising a substrate holder disposed in the base of theplasma chamber providing a supporting surface for supporting a substrateon which the polycrystalline CVD diamond wafer can be grown in use and asubstrate temperature control system comprising a coolant deliverysystem for supplying liquid and/or gas coolant to the substrate holderto control a temperature profile across the supporting surface of thesubstrate holder in use.

Each of the subsystems will be described in more detail below.

(A) The Gas and Microwave Delivery System

The microwave coupling configuration 10 comprises a coaxial waveguideconfigured to feed microwaves from a rectangular waveguide to an annulardielectric window 12. The coaxial waveguide comprises an inner conductorand an outer conductor. The annular dielectric window is made of amicrowave permeable material such as quartz which forms a vacuum-tightwindow in a top portion of the plasma chamber. The microwave generator 6and the microwave coupling configuration 10 are configured to generate asuitable wavelength of microwaves and inductively couple the microwavesinto the plasma chamber to form a standing wave within the plasmachamber having a high energy anti-node located just above the substrate5 in use.

The microwave coupling configuration 10 further comprises a waveguideplate 13. The waveguide plate 13 and its mounting configuration areillustrated in more detail in FIGS. 2( a), 2(b), and 3. The waveguideplate 13 comprising a plurality of apertures 32 disposed in an annularconfiguration, each aperture forming a waveguide for coupling microwavesfrom the coaxial waveguide into the plasma chamber through the annulardielectric window 12. The waveguide plate may also comprise a pluralityof channels 34 extending between the apertures suitable for supplyingcoolant and/or process gas from an outer circumferential region to aninner axial region.

This configuration has been found to be advantageous as it allowsmicrowave power to be coupled into the plasma chamber via an annulardielectric window while also allowing of the provision of coolant and/orprocess gases to regions of the plasma chamber enclosed by the waveguidestructure.

In addition to the above, the waveguide plate can be configured tosupport the central conductor of the coaxial waveguide. Accordingly,while the central conductor illustrated in FIG. 1 is a grounded post, inone alternative arrangement the central conductor can be formed as anelectrically floating post which is not required to be grounded on anupper wall of the rectangular waveguide from the microwave generator. Aninner conductor which is electrically floating in the waveguide is inmany respects a simpler and more convenient method of transferring powerfrom a rectangular to a coaxial waveguide. This has the disadvantage oflosing the grounded point at which services such as coolant water andprocess gas can be introduced through the central conductor as shown inFIG. 1. However, certain embodiments of the present invention provide analternative route for supplying such services via channels in thewaveguide plate.

Furthermore, the waveguide plate can be configured to couple togetherupper and lower portions of the plasma chamber and avoid largecompressive stresses on the annular dielectric window in use without theuse of a mechanical anchor point through a central conductor of thecoaxial waveguide. Further still, the annular dielectric window maycomprise two opposing surfaces through which microwaves are coupled intothe plasma chamber and seals may be provided on said two opposingsurfaces. This allows for a reliable seal to be formed between upper andlower portions of the plasma chamber and at the dielectric window.

FIG. 3 shows a cross-sectional view of a portion of the microwave plasmareactor illustrating an example of how the annular dielectric window 12and waveguide plate 13 can be mounted in the reactor. In the illustratedarrangement, an outer peripheral portion of the waveguide plate 13 isdisposed between the outer conductor 36 of the coaxial waveguide 38 anda side wall 40 of the plasma chamber. An outer peripheral portion of theannular dielectric window 12 is disposed between the waveguide plate 13and the side wall 40 of the plasma chamber. An inner portion of theannular dielectric window 12 is held between an inner portion of thewaveguide plate 13 and a further plate 42. The apertures 32 in thewaveguide plate are aligned with the annular dielectric window 12 andchannels 34 for supplying coolant and/or process gas pass between theapertures into the inner portion of the waveguide plate 13. The annulardielectric window 12 may be mounted to the waveguide plate usingelastomer o-rings 44. In this arrangement the further plate 42 can beattached to the waveguide plate 13 with a portion of the dielectricwindow 12 disposed and held therebetween via elastomeric o-rings 44.

The waveguide plate as described above fulfils several advantageousfunctions:

-   -   (i) it allows injection of coolant and/or process gases;    -   (ii) it supports the central coaxial conductor;    -   (iii) it forms a coupling between the upper and lower parts of        the plasma chamber;    -   (iv) it feeds microwaves from the coaxial waveguide into the        plasma chamber in an axial direction towards the substrate; and    -   (v) it supports an annular dielectric window.

In the illustrated embodiment, the plurality of apertures in thewaveguide plate are configured to couple microwaves into the plasmachamber in a direction parallel to a central axis of the plasma chamber.In this arrangement, the waveguide plate is disposed in a planeperpendicular to a central axis of the plasma chamber and forms aportion of an upper wall in the plasma chamber. It has been found thatcoupling microwaves into the plasma chamber in a direction parallel tothe axis of the chamber is more efficient and avoids the need for a morecomplex coaxial feed configuration. As such, even if channels forcoolant and/or process gas are not provided in the waveguide plate,and/or no floating post is provided, the waveguide plate according tothe present invention is still advantageous for coupling microwaves intothe plasma chamber in an efficient and simple manner.

The plurality of apertures are preferably configured to have a periodicrotational symmetry. For example, if n apertures are provided, theapertures are configured symmetrically around a circle to have n foldrotational symmetry. A symmetric arrangement is preferred to avoidasymmetries in the electric field within the plasma chamber formed as aresult of asymmetries in the apertures.

The annular dielectric window as previously described is formed of asingle complete ring of dielectric material. However, in an alternativearrangement the annular dielectric window may be formed of a pluralityof separate arcuate segments, each segment sealed across a correspondingaperture of the waveguide plate. One important feature of certainembodiments of the present invention, particularly for fabricating verylarge area polycrystalline CVD diamond wafers, is that the annulardielectric window is rotationally symmetric and has a rotational axis ofsymmetry lying within 0.2 mm, 0.15 mm, 0.10 mm, or 0.05 mm of thecentral rotational axis of symmetry of the resonance cavity.

In one configuration the one or more channels extending between theapertures in the waveguide plate comprise at least one channelconfigured to supply process gas to one or more injection ports arrangedopposite the substrate holder for injecting process gas towards thesubstrate holder. This configuration allows an axial gas flowarrangement to be disposed at the same end of the chamber as themicrowave coupling configuration.

A central portion of the waveguide plate can support a conductivesurface 46 disposed opposite the substrate holder. The conductivesurface may be formed by the waveguide plate or may be formed by aseparate metallic body which is connected to a central portion of thewaveguide plate. One or more gas inlet nozzles 16 may be disposed in theconductive surface for injecting process gas towards the substrateholder. In one configuration, the conductive surface is curved andextends towards a central region of the plasma chamber. For example, theconductive surface may form a cone-shaped body. Such a conductivesurface is useful as it can aid in preventing plasma formation in anupper region of the plasma chamber. Effectively, the conductive surfacecan mask off a high electric field region in use. That is, theconductive surface can be located to enclose a high electric fieldanti-node region which would exist in a corresponding chamber which didnot comprise the conductive surface extending towards a central regionof the plasma chamber.

The waveguide plate may include 2, 3, 4, 5, 6, 7 or more apertures. Ithas been found that varying the number of apertures can affect theefficiency at which microwaves are coupled into the plasma chamber.According to certain arrangements, the waveguide plate comprises an oddnumber of apertures, most preferably a prime number of apertures. Forexample, the waveguide plate may comprise 3, 5, or 7 apertures.

Each aperture is in effect equivalent to a rectangular waveguide. Athree way aperture can help to maximize the length of the aperture. Fourand six way alternatives have both been found to be deficient from thepoint of view of mode stability. Despite the presence of severalapertures, the power can be predominantly coupled into the cavity in aTM_(0mn) mode. There are effects from the symmetry of the aperturesvisible in the form of the generation of high order modes i.e. TM_(1mn)(where 1 does not equal zero). Thus a three way aperture in which allthree apertures are excited in phase will couple to the TM_(3mn) seriesof modes while the four and six way apertures might be expected tocouple with the much higher order TM_(8mn) and TM_(12mn) modes. Inpractice however, the four and six way apertures are prone to parasiticmodes. Thus a four or six way aperture can couple into the TM_(2mn)modes. Overall the effect is that the four and six way apertures canproduce asymmetries in the plasma that result in either the plasmamoving off centre or splitting two ways. The three way aperture gives astable three way pulling effect that is less undesirable than the moreserious one way and two way break-up modes that occur with otherconfigurations. Instabilities can be dealt with using mode cancellingblocks which are basically metal bodies that produce a perturbation tothe local electric field that is intended to cancel that of the threeway mode produced by the apertures. The position of these metal blockscan be established empirically. By placing them in regions of high wallcurrent (i.e. where the H field is high) the blocks can be used todisrupt the unwanted mode. As such in one arrangement a plurality ofmode cancelling blocks are disposed on an inner wall of the plasmachamber, for example on a side wall or on a base of the chamber, themode cancelling blocks being configured to compensate forelectromagnetic perturbations caused by the plurality of apertures. Themode cancelling blocks are spaced apart so as to be symmetricallyrelated to the aperture configuration. For example, the number of modecancelling blocks may be equal to the number of apertures provided inthe waveguide plate, the mode cancelling blocks being positioned to havea symmetry which corresponds to the aperture arrangement. For example,if three apertures are provided in the waveguide plate then three modecancelling blocks may be mounted around the plasma chamber wall in alower portion of the plasma chamber and arranged symmetrically so as tocancel perturbations in the electric field caused by the apertures.Alternatively, the number of mode cancelling blocks may be an integermultiple of the number of apertures while still being arranged to besymmetrically related to the aperture configuration. The mode cancellingblocks can be adhered to an inner wall of the plasma chamber or may beintegrally formed by a wall of the plasma chamber. Another possiblealternative to the three way aperture is to use a five or seven wayaperture. Because these are prime numbers they are resistant toover-moding with lower order two way modes etc. In this case the modecancelling blocks may not be required.

It is further advantageous to supply microwave energy to a plasmachamber via apertures having a specific radial width. A ratio of theannular gap (in a radial direction) provided by the apertures in thewaveguide plate to that of a diameter of the plasma chamber may be inthe range 1/10 to 1/50, 1/20 to 1/40, 1/25 to 1/35, or optionallyapproximately 1/30. This annular gap may be provided by locating theapertures adjacent the side wall of the plasma chamber with the outerconductor of the coaxial waveguide being comparable in diameter to thediameter of the resonance cavity of the plasma chamber and the innerconductor being only slightly smaller than the outer conductor toachieve a ratio as previously specified for the annular gap. By varyingthe ratio of the diameters of these two conductors it is possible tofind an optimum point at which a match to the chamber is achieved. In analternative arrangement, the apertures may be placed away from the sidewalls of the plasma chamber, e.g. at an intermediate position betweenthe centre and an edge of the top plate. Advantageously, the componentsof the chamber and microwave coupling assembly should be configured to ahigh degree of precision, e.g. such that dimensions and positioning ofcomponents is within 0.1% of the prescribed specification.

The gas supply system comprises a source gas container system 14, one ormore gas inlets 16 and one or more gas outlets 18. One axially disposedgas inlet is illustrated in FIG. 1 in the centre of the top plate of theplasma chamber which also forms the previously described waveguide plate13. Optionally, the gas inlet can be modified to provide an array of gasinlet nozzles across an area of the top plate of the plasma chamber.

The gas inlet is positioned in a top portion of the plasma chamberdirectly above the substrate holder and configured to directly feed gasat high velocity towards the substrate. Process gas is removed at one ormore outlets in or near the base of the plasma chamber. Optionally, theprocess gas can be recirculated to the inlet using a pump. An advantageof such a system is that high velocity gas flow directed towards thesubstrate transports activated gas species from the plasma to thesubstrate by convection. This aids in increasing growth rates whencompared with systems which rely upon diffusion of activated gas speciesfrom the plasma to the substrate. Furthermore, as previously discussed,by increasing the hydrogen gas flow rate using such an arrangement it ispossible to push more atomic hydrogen to peripheral regions of thepolycrystalline diamond wafer thus increasing the rate at whichnon-diamond carbon is etched from the growth surface and improving thequality of the material in peripheral regions of the growing wafer.

An alternative or additional solution is to provide a gas inlet nozzlearray having a plurality of gas inlet nozzles directed towards thegrowth surface of the substrate and disposed over an area sufficientlylarge to ensure that a sufficiently large concentration of atomichydrogen is provided in peripheral regions of a polycrystalline diamondwafer during growth. In this regard, a relatively high number of nozzlescan be closely spaced to ensure a relatively uniform flow of gas. It hasbeen found that providing a relatively high number density of nozzles inan array improves the uniformity of gas flow towards the substrate inuse and allows the plasma to be uniformly flattened and shaped relativeto the substrate to achieve uniform diamond film formation at high ratesover a relatively large area. It has also been found to be useful toprovide relatively small area nozzles such that the area of the nozzlearray is largely made up of the space in-between the nozzles rather thanthe area of the nozzle outlets themselves. As such, whereas it has beenfound to be advantageous to provide a relatively large number density ofnozzles in relation to the area of the nozzle inlet array, it has alsobeen found to be advantageous to provide an array in which the ratio ofthe area of the nozzle inlets divided by the area of the nozzle array asa whole is low. It has been found that small nozzles are advantageousfor providing high velocity directed gas flows. However, it is alsodesired to have a relatively uniform gas flow over a relatively largearea for uniform deposition of a diamond film over a relatively largearea. Accordingly, a combination of relatively small inlet nozzle sizeand a relatively high number density of such nozzles has been found tobe advantageous to achieve a balance between high velocity directed gasflows and uniformity of gas flow over a relatively large area.

In light of the above, a modified gas flow system may comprise a gasinlet nozzle array comprising a plurality of gas inlet nozzles disposedopposite the substrate holder for directing process gases towards thesubstrate holder, the gas inlet nozzle array comprising: at least sixgas inlet nozzles disposed in a substantially parallel or divergentorientation relative to a central axis of the plasma chamber (bysubstantially parallel we mean at least within 10°, 5°, 2°, or 1° of aperfect parallel arrangement); a gas inlet nozzle number density equalto or greater than 0.1 nozzles/cm², (but preferably much higher forcertain applications) wherein the gas inlet nozzle number density ismeasured by projecting the nozzles onto a plane whose normal liesparallel to the central axis of the plasma chamber and measuring the gasinlet number density on said plane; and a nozzle area ratio of equal toor greater than 10 (but preferably much higher for certainapplications), wherein the nozzle area ratio is measured by projectingthe nozzles onto a plane whose normal lies parallel to the central axisof the plasma chamber, measuring the total area of the gas inlet nozzlearea on said plane, dividing by the total number of nozzles to give anarea associated with each nozzle, and dividing the area associated witheach nozzle by an actual area of each nozzle.

In accordance with certain embodiments of the present invention the oneor more gas inlet nozzles have a rotational axis of symmetry lyingwithin 1.0 mm, 0.5 mm, 0.25 mm, 0.2 mm, 0.15 mm, 0.10 mm, or 0.05 mm ofthe central rotational axis of symmetry of the resonance cavity.

(B) The Plasma Chamber

The plasma chamber is configured to form a resonance cavity supporting astanding microwave in use. According to one configuration the plasmachamber is configured to support a TM_(01n) standing microwave in use,e.g. a TM₀₁₁ mode. The operational frequency may be in a range 400 to500 MHz or 800 to 1000 MHz.

It has also been found to be advantageous to provide a cylindricalresonance cavity configured to have a diameter which satisfies thecondition that a ratio of the resonance cavity height/the resonancecavity diameter is in the range 0.3 to 1.0, 0.4 to 0.9, or 0.5 to 0.8.Such a ratio constitutes a relatively small diameter cavity whencompared to prior art arrangements. Although it would seemcounter-intuitive, it has been found that it is advantageous to use aplasma reactor chamber having a relatively small diameter to form auniform, stable, large area plasma for achieving uniform CVD diamondgrowth over large areas. A relatively small diameter cavity can providethe following beneficial technical effects:

-   -   (i) Improve resonance mode purity within the chamber and avoid        complex interactions between numerous modes during operation        over the long time-scales required for CVD diamond synthesis.        For example, a small diameter chamber can reduce the problem of        slight temperature instabilities in the CVD diamond growth        surface stimulating an unwelcome higher order mode.    -   (ii) A cavity formed within a specific, relatively small,        diameter range is considered to allow the formation of localized        higher order axis-symmetric modes at the substrate making the        E-field across the substrate more uniform without forming very        intense radial E-fields at the top corners of the substrate.    -   (iii) A small diameter cavity which has a relatively low Q        factor is more easy to start and tune, and is less sensitive to        variations in microwave source frequency.

Such a relatively small diameter cavity also helps to alleviate theproblem of complex and interacting gas convection currents formingwithin the chamber leading to plasma instability. That is, the presentinventors consider that a small diameter cavity provides a more simpleand easier to control system in terms of both gas flow and microwavepower within the plasma chamber such that a more uniform, stable, largearea plasma can be formed and maintained to achieve uniform CVD diamondgrowth over large areas. At the same time, the diameter of the cavityshould not be so small that the plasma becomes compressed andnon-uniform across the substrate.

For example, the resonance cavity height, as measured from the base tothe top plate of the plasma chamber, may lie in a range: 300 mm to 600mm, 300 mm to 500 mm, or 400 mm to 500 mm at a microwave frequency f inthe range 400 MHz to 500 MHz; or 150 mm to 300 mm, 150 mm to 250 mm, or200 mm to 250 mm at a microwave frequency f in the range 800 MHz to 1000MHz. The resonance cavity diameter may lie in the range: 400 mm to 1000mm, 500 mm to 900 mm, or 600 mm to 800 mm at a microwave frequency f inthe range 400 MHz to 500 MHz; or 200 mm to 500 mm, 250 mm to 450 mm, or300 mm to 400 mm at a microwave frequency f in the range 800 MHz to 1000MHz. The resonance cavity may have a volume in a range: 0.018 m³ to0.530 m³, 0.062 m³ to 0.350 m³, 0.089 m³ to 0.270 m³, or 0.133 m³ to0.221 m³ at a microwave frequency f in the range 400 to 500 MHz; or0.002 m³ to 0.06 m³, 0.007 m³ to 0.04 m³, 0.01 m³ to 0.03 m³, or 0.015m³ to 0.025 m³ at a microwave frequency f in the range 800 MHz to 1000MHz.

One potentially problem when using a small cavity arrangement asdescribed above is that of over heating in wall components of thechamber. However, it has been found to be advantageous to provide anarrangement in which the walls of the resonance cavity are exposed tothe plasma in use, i.e. the plasma is not contained within a bell jar,to avoid silicon contamination. Plasma reactor vessels are usuallymanufactured from welded stainless steel as this is the acceptedmaterial of choice for ultra-high vacuum (UHV) chambers. However, it hasbeen found that this creates problems with arcing at interfaces, sootformation on hot surfaces, and generally poor heat transfer.Furthermore, these chambers cost a large amount of money to build.Aluminium has been found to be a better material thermally and is alsoeasy to machine. Thus, while stainless steel is a good material forvacuum chambers, its very poor thermal performance makes it not wellsuited to use in areas where high power densities are experienced.Materials such as aluminium, while not traditionally regarded assuitable for high vacuum, are actually quite good for reasonably highvacuum usage where conventional elastomer seals can be used.

In light of the above, the resonance cavity may comprise internal wallsconfigured to be exposed to a plasma formed within the resonance cavityin use, the internal walls comprising metallic surfaces forming at least75%, 80%, 85%, 90% or 95% of a total surface area of the internal wallswithin the resonance cavity. The metallic surfaces may be made ofaluminium or an alloy thereof comprising at least 80%, 90%, 95%, or 98%by weight of aluminium. Furthermore, a portion of the internal wallsformed by the annular dielectric window, is preferably no more than 25%,20%, 15%, 10%, or 5% of the total surface area of the internal wallswithin the resonance cavity.

Although a basic cylindrical chamber configuration is illustrated inFIG. 1, additional optional features may be provided. For example,projections from a wall of the chamber may be provided in certaininstances. These may be provided to modify the electric field formednear the substrate, introducing a vertical asymmetry which increases theelectric field above the substrate relative to the electric field at anopposite end of the plasma chamber where plasma formation is notdesirable. In addition, such projections can function as a mode filter,aiding stability and/or purity of the electric field which drives theplasma. Such projections may also be provided to alter the thermalproperties of the plasma which can aid in improving uniformity of CVDdiamond growth, function as a physical boundary to confine the plasma inuse and prevent the plasma from deviating from an axially centrallocation above the substrate, and/or interrupt gas flow up a side wallof the plasma chamber thereby reducing gas entrainment and unwantedconvection currents within the chamber which would otherwise destabilizethe inlet gas streams and/or the plasma. In such cases, it should beensured that any additional structures provided within the plasmachamber have a high degree of rotational symmetry and alignment with therotational symmetry axis of the plasma chamber to achieve good opticalquality material out to large diameters.

(C) The Substrate Mounting Configuration

It has been found that the electric field profile is significantlyperturbed when a substrate is introduced into the resonance cavity ascan be shown by modelling or empirical measurement. In this regard,FIGS. 4( a) to 4(c) illustrate electric field profile plots showing howthe electric field varies with differing height of a substrate within aresonance cavity of a plasma reactor. The plots show the magnitude ofthe electric field E_(z) on the Y-axis against the lateral position Xacross the diameter of the resonance cavity above the substrate.

FIG. 4( a) illustrates the electric field profile when the growthsurface of the substrate S is located just above a base B of theresonance cavity C. The electric field profile is dominated by that ofthe empty chamber which is a J₀ Bessel function for a TM_(01n) chamber.There is only a slight contribution to the electric field magnitude fromthe upper edge of the substrate forming a coaxial mode set up betweenthe substrate and the chamber wall. In this arrangement, the electricfield is high above a central region of the substrate and drops offsignificantly towards the edge of the substrate. As such, this electricfield profile results in poor CVD diamond growth in a peripheral regionof the substrate growth surface.

FIG. 4( b) illustrates the electric field profile when the growthsurface of the substrate S is located high above the base B of theresonance cavity C. The electric field profile is now dominated by thecoaxial mode set up between the substrate and the chamber wall whichdecays evanescently into a central region of the chamber. In thisarrangement, the electric field is high above a peripheral region of thesubstrate and drops off towards the central region of the substrate. Assuch, this electric field profile results in poor CVD diamond growth ina central region of the substrate growth surface.

FIG. 4( c) illustrates the electric field profile when the growthsurface of the substrate S is located at the correct height above asurrounding surface within the resonance cavity C. The electric fieldprofile of the empty chamber is balanced with the coaxial mode set upbetween the substrate and the chamber wall to form a substantiallyuniform electric field region over the majority of the substrate with aring of higher electric field localized around the substrate edge. Thecentral region of the electric field is substantially uniform but has aslightly lower electric field region just inside the ring of higherelectric field localized around the substrate edge. One would think thatthis lower electric field region would lead to poor CVD diamond growthat this region of the growth surface. However, in practice it has beenfound that the higher electric field ring immediately outside the regionof lower electric field aids in pulling the plasma outwards,compensating for the slight non-uniformity in the central region andresulting in a large, flat, uniform plasma over the majority of thesubstrate enabling uniform CVD diamond growth over large areas. Inpractice, it has been found that a large, flat, uniform plasma over themajority of the substrate enabling uniform CVD diamond growth over largeareas can be achieved when a ratio of substrate diameter/height of thegrowth surface of the substrate is in a range 10 to 14, 11 to 13.5, or11.0 to 12.5, wherein the height of the growth surface of the substrateis relative to a mean height of a surface surrounding the substrate.

According to certain embodiments of the present invention the substrateholder has a rotational axis of symmetry lying within 1.0 mm, 0.5 mm,0.25 mm, 0.2 mm, 0.15 mm, 0.10 mm, or 0.05 mm of the central rotationalaxis of symmetry of the resonance cavity. Furthermore, in use asubstrate may be located and aligned on the substrate holder such that athe rotation axis of symmetry of the substrate lies within 1.0 mm, 0.5mm or 0.2 mm of the central rotational axis of symmetry of the resonancecavity when located over the substrate holder.

For an arrangement in which the substrate holder is the same diameter asthe substrate, the substrate holder will be located wholly under thesubstrate and the surface surrounding the substrate may be formed by thebase of the plasma chamber. As such, in this case the mean height of thesurface surrounding the substrate will equate to the height of the baseB of the plasma chamber C and the height of the growth surface of thesubstrate, H_(gs), will be measured from the base of the plasma chambersurrounding the substrate S and substrate holder SH as illustrated inFIG. 5( a). Alternatively, for an arrangement in which the substrateholder is much larger than the substrate thus forming a large flatsurface which surrounds the substrate, the mean height of the surfacesurrounding the substrate will equate to a top surface of the substrateholder. As such, in this case the height of the growth surface of thesubstrate, H_(gs), will be measured from the top surface of thesubstrate holder SH surrounding the substrate S as illustrated in FIG.5( b). For an arrangement in which the substrate holder extends outwardsfrom the substrate with a sloped, curved, or stepped top surfacesurrounding the substrate then the mean height of the local surroundingsurface, H_(iss), can be defined by a mean of a height, H_(local), of across section between the edge of the substrate, at Rs, and a distanceapproximately two times the thickness of the substrate, 2×Ts, away fromthe substrate edge, taken in a radial direction, X:

$H_{lss} = {\frac{1}{2\; {Rs}}{\int_{Rs}^{{Rs} + {2\; {Ts}}}{H_{local}\ {X}}}}$

Such an arrangement is illustrated in FIG. 5( c) for a sloped substrateholder. For example, for a substrate holder having a top surface slopingaway from the substrate at an angle of 45° to a distance 2×Ts from thesubstrate in a radial direction, the mean height of the surfacesurrounding the substrate will equate to half the height of thesubstrate holder SH. As such, in this case the height of the growthsurface of the substrate, H_(gs), will be measured from half the heightof the substrate holder SH.

In relation to the above, it has been found that providing a step of aparticular height between the substrate growth surface and the localsurrounding surface perturbs the electric field profile of the plasmachamber in such a way that the electric field profile of the emptychamber is balanced with a coaxial mode set up between the substrate andthe chamber wall to form a substantially uniform electric field regionover the majority of the substrate with a ring of higher electric fieldlocalized around the substrate edge as previously described.

The magnitude of the coaxial mode set up between the substrate and thechamber wall can also be affected by the ratio of a resonance cavitydiameter/substrate diameter. Accordingly, in certain arrangements it maybe preferred to provide a configuration in which a ratio of resonancecavity diameter/substrate diameter is in the range 1.5 to 5, 2.0 to 4.5,or 2.5 to 4.0, wherein the resonance cavity diameter is measured at aheight less than 50%, 40%, 30%, or 20% of a height of the resonancecavity. In one particularly preferred arrangement the aforementionedratios hold when the resonance cavity diameter is measured at a heightof the growth surface of the substrate.

Providing suitable substrate dimensions and correctly locating thesubstrate within the plasma chamber can thus aid providing a moreuniform plasma over larger areas. Furthermore, the uniform plasmaachieved by such configurations also provides relatively uniform heatflow towards the substrate which has been found to aid in alleviatingthe problem of cracking of the CVD diamond when the CVD diamond coolsafter growth. In this regard, stress balance in a CVD diamond wafer islargely determined by the variation in growth temperatures over thediamond wafer. Hotter regions during growth contract more during cooldown, and are therefore in tension; cooler regions contract less, andtherefore remain in compression. Variations in stress within the CVDdiamond wafer during cooling can result in cracking. As such, largevariations in substrate temperature are not desirable.

That said, one potential problem using the previously describedarrangement is that the high electric field ring disposed around theedge of the substrate can lead to higher substrate temperatures at theedge of the substrate and this can potentially lead to cracking of thesubstrate when the CVD diamond material cools after growth. Indeed,rather than having a completely uniform temperature across the substrategrowth surface as might be intuitively desired, the present inventorsconsider that it is actually desirable to ensure that the edgetemperature of the substrate growth surface is lower that thetemperature in a central region of the substrate growth surface. Thereason for such an arrangement is that crack propagation can beminimised by ensuring that compressive regions within the CVD diamondmaterial are near where cracks can originate, i.e. near the edge of theCVD diamond wafer. Accordingly, keeping the edge of the substrate growthsurface slightly cooler than a central region during growth isconsidered to be advantageous in forming a compressive region near theedge of the resulting CVD diamond wafer. If a crack is initiated at anedge of a CVD diamond wafer during cooling, the compressive region nearthe edge of the CVD diamond wafer prevents the crack from propagatingtowards the centre of the CVD diamond wafer. As such, any cracks whichare initiated tend to remain short and located at an outer edge of theCVD diamond wafer which can subsequently be processed to remove anyminor edge damage. In this regard, it is advantageous to provide asubstrate temperature control system an example of which is illustratedin the reactor configuration of FIG. 1.

The substrate 5 is spaced apart from the substrate holder 4 by spacerwires or spacer pads 20 to define a gas gap 22 between a supportingsurface of the substrate holder 4 and a rear surface of the substrate 5.Furthermore a gas supply system 24 is coupled to the gas gap 22 via asupply pipe 26 which extends from the gas supply system 24 through thesubstrate holder 4 and is configured to supply gas into the gas gap 22through one or more outlets in the supporting surface of the substrateholder. A coolant liquid supply system 28 is also provided for coolingthe substrate holder 4.

The coolant liquid supply system 28 provides a rough basic cooling tothe substrate holder. However, this system has been found to beinsufficiently precise for the fine temperature control of the substratewhich is considered to be required by the present inventors in order toobtain high quality, uniform deposition of CVD diamond over large areas.Accordingly, the gas supply system 24, 26 is provided in order to allowmore precise control of the substrate temperature. The gas supply systemmay be configured to inject at least two gases having different thermalconductivities into the gas gap below the substrate and vary a ratio ofthe at least two gases in order to control the temperature of thesubstrate on the substrate holder. For example, the gas supply systemmay utilize a mixture of a light gas such as hydrogen and a heavy gassuch as argon which is less thermally conductive. Advantageously, thegases used to control the temperature of the substrate are ones whichare also utilized in the main process chemistry so that additional gassources are not required. If the edge temperature of the substrate istoo high relative to the central region of the substrate, the proportionof heavy gas relative to light gas can be increased to reduce thethermal conductivity of the gas under a central region of the substrate,thus causing the central region of the substrate to heat up relative tothe edge of the substrate. Conversely, if the edge temperature of thesubstrate is too low relative to the central region of the substrate,the proportion of light gas relative to heavy gas can be increased toincrease the thermal conductivity of the gas under a central region ofthe substrate, thus causing the central region of the substrate to cooldown relative to the edge of the substrate. The absolute temperature ofthe substrate as well as the relative temperature of different regionsof the substrate can also be controlled by varying gas flow and gascomposition within the gas gap under the substrate.

The spacer wires 16 may be configured to define a central gas gap cavityunder the substrate so that the gas pools in the central gas gap cavity.For example, the spacer wires 16 can be each arcuate in shape andconfigured into a ring with gaps therebetween through which gas canflow. The spacer elements may be electrically conductive and/or may befixed in place with an electrically conductive adhesive such as SilverDAG™ which has been found to be useful in ensuring a good electricalcontact between the spacer elements and the substrate holder. This aidsin preventing the problem of arcing under the substrate which candetrimentally affect temperature control. It has also been noted thatthe position of gaps between the ring sections of the spacer wires canproduce a variation in thickness of the diamond wafer. If desired, thenumber and position can be adjusted to compensate for othernon-uniformities inherent in diamond wafers produced by a given reactor.

The microwave plasma reactor further comprises one or more temperaturemeasurement devices configured to take at least two temperaturemeasurements, including one or more measurements in a central region ofthe growth surface of the substrate and one or more measurements in aperipheral region of the growth surface of the substrate as previouslydescribed. The temperature measurements may be taken simultaneously orwithin a short time interval of each other and the substrate temperaturecontrol system may be used to ensure that the temperature gradient doesnot move outside the previously described ranges. The temperaturemeasurement device may comprise a pyrometer 30 as illustrated in FIG. 1.Two pyrometers may be provided, one to take the central temperaturemeasurements and one to take the peripheral temperature measurements.

Microwave plasma reactors may comprise further features such as ametallic temperature modifying ring disposed around the substrate. Sucha temperature modifying ring performs two roles: it moves the ring ofhigh electric field away from the substrate edge; and, being aseparately heated (by plasma) and cooled (by the chamber base) item, itdirectly modifies the substrate edge temperature. As such, the ring canfunction to cool the edge of the substrate, reducing the magnitude ofany tensile stresses, making cracking of the CVD diamond less likely. Inaddition, adjusting the temperature modifying ring disposed around thesubstrate can also modify overgrowth of CVD diamond down the edge of thesubstrate thereby aiding release of the CVD diamond material from thesubstrate. As with previously described structures, if any such a ringstructure is provided within the plasma chamber then it should beensured that it is rotationally symmetric and precisely aligned relativeto the rotational axis of the plasma chamber to prevent asymmetrieswhich are detrimental when growing large area optical quality syntheticdiamond windows.

The substrate temperature control system may be configured to controlthe temperature of the growth surface of the substrate during CVDdiamond growth thereon to fulfil the condition: 5° C.<T_(c)−T_(e)<120°C.; 10° C.<T_(c)−T_(e)<100° C.; 10° C.<T_(c)−T_(e)<80° C.; 20°C.<T_(c)−T_(e)<80° C.; or 20° C.<T_(c)−T_(e)<60° C., where T_(c) is atemperature in the central region of the growth surface and T_(e) is atemperature in the peripheral region of the growth surface. If Tc−Tebecomes too large, excessive tension may be created in the centralregion of the CVD diamond wafer during cooling, leading to cracking inthe central region of the CVD diamond wafer. If Tc−Te becomes too small,compressive regions will not form near the edge of the CVD diamond waferand any cracks which initiate at the edge of the wafer are more likelyto propagate across the CVD diamond wafer resulting in very long cracks,including complete wafer fracture.

Even when utilizing arrangements such as those described above, a numberof problems may still exist, although these may be substantiallyalleviated by the previously described arrangements. For example, insome instances there may still be issues of non-uniform CVD diamondgrowth across the substrate, diamond wafer delamination from thesubstrate during CVD diamond growth, and crack initiation and/orpropagation during cooling after growth of the CVD diamond wafer,particularly when larger substrates are used for growing large areapolycrystalline diamond discs or when growing a plurality of singlecrystal diamonds in a single growth run on a plurality of single crystaldiamond substrates adhered to a supporting substrate over a relativelylarge area. This is particularly problematic as there is an on goingneed to increase the area over which high quality, uniform CVD diamondcan be grown. Furthermore, these problems tend to be exacerbated whenthe substrates are reused in subsequent growth runs. This isparticularly problematic for refractory metal substrates which areexpensive and reuse is desirable in an economically competitiveindustrial process.

One possible solution considered by the inventors was that the qualityof the growth surface was in some way affecting the release of a CVDdiamond wafer on cooling after growth thus causing cracking. However, itwas found that processing the growth surface to have a more preciselydefined flatness and roughness did not in itself solve the problems.After much research focussed at addressing these issues, the presentinventors have surprisingly found that the problems they have observedare a result of small variations in temperature across the growthsurface of the substrate caused by very minor variations in the heightof the gas gap under the substrate. In particular, the present inventorsfound that although the cylindrical refractory metal substrates providedby their supplier have nominally planar front and rear surfaces, thesesurfaces are not sufficiently flat. Minor flatness variations in a rearsurface of the substrate result in minor variations in the height of thegas gap and it has been found that this results in differential coolingacross the substrate. The temperature variations caused by thevariations in the gas gap height result in stress variations in the CVDdiamond on cooling after CVD diamond growth which can cause the diamondwafer to crack in at least a proportion of growth runs resulting inreduced yields.

While the previously described arrangements can control variations intemperature which are circumferentially symmetric, it can be moredifficult to control temperature variations which are notcircumferentially symmetric such as those caused by variations in thegas gap height. For example, refractory metal substrates tend to sag andbuckle during use (despite being a long way from their melting point).Uniform sag mainly modifies Tc−Te which can be controlled as previouslydescribed. However, buckling introduces non-uniformities in thetemperature around the wafer edge which are not symmetric. Therefore itis not easy to maintain the whole edge in compression. Typical bucklingmagnitudes can be greater than 20 micron (peak to valley). For a gas gapof approximately 200 microns, this corresponds to a 10% variation inthickness, and corresponding temperature variation. This can result inup to 60° C. variations in temperature around the wafer edge.

In order to solve this problem, it is advantageous to ensure that theheight h of the gas gap varies by no more than 200 μm, 150 μm, 100 μm,80 μm, 60 μm, 40 μm, 20 μm, 10 μm, or 5 μm. This may be achieved, forexample, by further processing the rear surface of substrates providedby suppliers to have a very precisely defined profile which iscomplementary to the profile of the supporting surface of the substrateholder. For example, if the supporting surface of the substrate holderis flat, then the rear surface of the substrate should be processed toensure that it is very precisely flat.

Accordingly, control of rear surface substrate shape by mechanical means(preferably uniform, non-directional processing, e.g. lapping ratherthan grinding) has been found to be advantageous. Furthermore, thesupporting surface of the substrate holder may also be processed to havea precisely defined profile which is complementary to the rear surfaceof the substrate.

In addition to the above, it has also been found that some cylindricalrefractory metal substrates provided by suppliers do not result inuniform, high quality CVD diamond wafers, even if both front and rearsurfaces were processed as outlined above. Commercially availablerefractory metals often contain small amounts of graphite formingdefects and/or impurities such as iron and nickel. Even very smallproportions of such defects and/or impurities have been found to affectCVD diamond growth on the growth surface of such a substrate.Accordingly, in addition to applying the precise processing of bothfront and rear surfaces of the substrate as previously described, it isadvantageous to use a carbide forming refractory metal substrate whichhas very high chemical purity with less than 0.5%, 0.1%, 0.075%, 0.05%,0.025%, 0.01%, 0.005%, or 0.001% by weight of graphite forming defectsand/or impurities at the growth surface of the substrate.

Optionally, the growth surface has a surface roughness R_(a) in therange 1 nm to 1 μm. It has been found that the roughness of the growthsurface can affect both the crystal structure of the CVD diamond grownthereon and adhesion strength of the CVD diamond to the substrate. Ithas been found that a surface roughness R_(a) in the range 1 nm to 1 μmhas been found to be particularly useful to provide sufficient adhesionto the CVD diamond during growth to prevent early delamination duringgrowth while providing a sufficiently low adhesion such that the diamondmaterial can be released from the substrate on cooling after CVD growthwithout the material cracking. Preferred range of surface roughness maybe 1 nm to 500 nm, 10 nm to 500 nm, 10 nm to 200 nm Typically, therefractory metal discs are first lapped on a cast iron wheel usingdiamond grit suspended in a lapping fluid. In general, the lappingprocess is used for bulk material removal and also to achieve therequired flatness for the given process. There are a few processes wherethe as-lapped surface is used. A typical R_(a) value for the lappedfinish is 100 nm to 500 nm. However, usually the lapped surface is thenfurther processed using, for example, a grinding/polishing machine andusing a finer grit to obtain a lower surface roughness value. Prior toCVD diamond growth, the refractory metal substrates may be cleaned toensure all contamination from the lapping process has been removedand/or seeded to aid nucleation for diamond growth thereon.

Process Conditions

Using the aforementioned apparatus a process has been developed forfabricating high optical quality CVD diamond material over large areas.The process comprises:

-   -   locating a substrate over the substrate holder, the substrate        being rotationally symmetric and having a rotation axis of        symmetry lying within 1.0 mm of the central rotational axis of        symmetry of the resonance cavity when located over the substrate        holder;    -   feeding microwaves into the plasma chamber through the annular        dielectric window at a power in a range 15 to 40 kW, 20 to 35        kW, or 25 to 30 kW;    -   feeding process gases into the plasma chamber through the one or        more gas inlet nozzles, the process gases comprising an atomic        concentration of hydrogen in a range 98 to 99%, an atomic        concentration of carbon in a range 0.3 to 1.2%, 0.5 to 1.1%, or        0.7 to 1.0% and an atomic concentration of nitrogen in a range        30 to 270 ppb, 50 to 220 ppb, or 100 to 200 ppb wherein a total        flow rate of the process gases lies in a range 2000 to 15000        sccm, 2000 to 10000 sccm, 2000 to 5000 sccm, or 2500 to 4000        sccm, and a pressure within the plasma chamber lies in a range        140 to 235 Torr, 160 to 225 Torr, 180 to 220 Torr, or 200 to 215        Torr;    -   growing a polycrystalline CVD diamond wafer on the substrate at        a substrate temperature in a range 775 to 950° C., 800 to 925°        C., 825 to 920° C., or 850 to 910° C.,;    -   removing the polycrystalline CVD diamond wafer from the        microwave plasma reactor; and    -   polishing the polycrystalline CVD diamond wafer.

High pressure, high power, high gas flow rate conditions have been foundto be advantageous for synthesizing high optical quality material overlarge areas. However, such conditions are difficult to control in auniform manner. The microwave plasma reactor and substrateconfigurations as previously described are capable of sustaining suchconditions in a stable and uniform manner in order to achieve thepresent invention.

However, it has been found that even utilizing the previously describedprecisely-aligned microwave plasma reactor configuration, the quality ofpolycrystalline diamond material around a peripheral region of thepolycrystalline diamond wafer may not meet extremely high opticalquality requirements for very large areas. In particular, levels ofimpurities and/or defects such as non-diamond carbon have been found toincrease at a peripheral region of larger area wafers. This problem isexacerbated when also growing to larger thicknesses because as asynthetic polycrystalline diamond wafer grows, grain boundaries increasein size and this leads to an increase in the rate of impurity uptakewithin the grain boundaries. It has been found that this problem can bealleviated by increasing the hydrogen gas flow rate. It is consideredthat the concentration of atomic hydrogen available to selectively etchoff non-diamond carbon from the substrate is lower at very largediameters and thus the efficiency of non-diamond carbon etching isreduced. It is believed that increasing the hydrogen gas flow ratedirected towards the growth surface pushes more atomic hydrogen toperipheral regions of the polycrystalline diamond wafer thus increasingthe rate at which non-diamond carbon is etched from the growth surfaceand improving the quality of the material in peripheral regions of thegrowing wafer. An alternative or additional solution is to provide a gasinlet nozzle array having a plurality of gas inlet nozzles directedtowards the growth surface of the substrate and disposed over an areasufficiently large to ensure that a sufficiently large concentration ofatomic hydrogen is provided in peripheral regions of a polycrystallinediamond wafer during growth. Yet another alternative or additionalsolution is to reduce the growth rate of the polycrystalline CVD diamondwafer to allow more time for non-diamond carbon to be etched from thegrowth surface. For example, the growth rate may be decreased as athickness of the polycrystalline CVD diamond wafer increases by, forexample, reducing the atomic concentration of carbon and/or the atomicconcentration of nitrogen during growth of the polycrystalline CVDdiamond wafer on the substrate.

By combining developments in reactor design, engineering tolerancecontrol, and process design it has been possible to achieve fabricationof large synthetic polycrystalline diamond windows having extremely highoptical quality.

After polishing, the polycrystalline CVD diamond wafer may be furtherprocessed by performing a plasma or chemical treatment to generate anoxygen terminated surface on the polycrystalline CVD diamond wafer. Thisis useful as the as the surface termination can affect opticalcharacteristics.

Product

Using the apparatus and process conditions as described above, it ispossible to fabricate a polycrystalline CVD diamond wafer as illustratedin FIGS. 6( a) and 6(b).

The polycrystalline CVD diamond wafer comprising:

a polycrystalline chemical vapour deposited (CVD) diamond wafercomprising:

-   -   a largest linear dimension equal to or greater than 70 mm;    -   a thickness equal to or greater than 1.3 mm; and    -   one or both of the following characteristics measured at room        temperature (nominally 298 K) over at least a central area of        the polycrystalline CVD diamond wafer, said central area being        circular, centred on a central point of the polycrystalline CVD        diamond wafer, and having a diameter of at least 70% of the        largest linear dimension of the polycrystalline CVD diamond        wafer:    -   (1) an absorption coefficient ≦0.2 cm⁻¹, ≦0.1 cm⁻¹, or ≦0.05        cm⁻¹ at 10.6 μm; and    -   (2) a dielectric loss coefficient at 145 GHz, of tan δ≦2×10⁻⁴,        ≦10⁻⁴, ≦5×10⁻⁵, ≦10⁻⁵, ≦5×10⁻⁶, or ≦10⁻⁶.

Preferably, the polycrystalline CVD diamond wafer further comprises oneor more of the following structural characteristics over at least thecentral area:

-   -   (3) a tensile rupture strength with a nucleation face of the        polycrystalline CVD diamond wafer in tension of: ≧760 MPa×n for        a thickness of 200 to 500 μm; ≧700 MPa×n for a thickness of 500        to 750 μm; ≧650 MPa×n for a thickness of 750 to 1000 μm; ≧600        MPa×n for a thickness of 1000 to 1250 μm; ≧550 MPa×n for a        thickness of 1250 to 1500 μm; ≧500 MPa×n for a thickness of 1500        to 1750 μm; ≧450 MPa×n for a thickness of 1750 to 2000 μm; or        ≧400 MPa×n for a thickness of ≧2000 μm, wherein multiplying        factor n is 1.0, 1.1, 1.2, 1.4, 1.6, 1.8, or 2.    -   (4) a tensile rupture strength with a growth face of the        polycrystalline CVD diamond wafer in tension of: ≧330 MPa×n for        a thickness of 200 to 500 μm; ≧300 MPa×n for a thickness of 500        to 750 μm; ≧275 MPa×n for a thickness of 750 to 1000 μm; ≧250        MPa×n for a thickness of 1000 to 1250 μm; ≧225 MPa×n for a        thickness of 1250 to 1500 μm; ≧200 MPa×n for a thickness of 1500        to 1750 μm; ≧175 MPa×n for a thickness of 1750 to 2000 μm; or        ≧150 MPa×n for a thickness of ≧2000 μm, wherein multiplying        factor n is 1.0 1.1, 1.2, 1.4, 1.6, 1.8, or 2.    -   (5) a surface flatness ≦5 μm, ≦4 μm, ≦3 μm, ≦2 μm, ≦1 μm, ≦0.5        μm, ≦0.2 μm, ≦ or 0.1 μm.

Preferably, the polycrystalline CVD diamond wafer further comprises oneor more of the following characteristics over at least the central area:

-   -   (6) an average black spot density no greater than 1 mm⁻², 0.5        mm⁻², or 0.1 mm⁻²;    -   (7) a black spot distribution such that there are no more than        4, 3, 2, or 1 black spots within any 3 mm² area;    -   (8) an integrated absorbance per unit thickness of no more than        0.20 cm⁻², 0.15 cm⁻², 0.10 cm⁻², or 0.05 cm⁻², when measured        with a corrected linear background in a range 2760 cm⁻¹ to 3030        cm⁻¹;    -   (9) a thermal conductivity of no less than 1900 Wm¹K⁻¹, 2000        Wm⁻¹K⁻¹, 2100 Wm⁻¹K⁻¹, or 2200 Wm⁻¹K⁻¹;    -   (10) a total integrated scatter in a forward hemisphere no more        than 1%, 0.5%, or 0.1% at 10.6 μm for a sample thickness of 0.7        mm with front and rear surfaces polished to a root mean squared        roughness of less than 15 nm; and    -   (11) a silicon concentration as measured by secondary ion mass        spectrometry of no more than 10¹⁷ cm⁻³, 5×10¹⁶ cm⁻³, 10¹⁶ cm⁻³,        5×10¹⁵ cm⁻³, or 10¹⁵ cm⁻³.

Embodiments may comprise any combination of the aforementioned preferredcharacteristics. However, of the eleven recited characteristics givenabove, the polycrystalline CVD diamond wafer preferably comprises two,three, four, five, six, seven, eight, nine, ten, or most preferably alleleven of said characteristics.

Preferably, the diameter of the central area over which the abovedefined characteristics are met is at least 75%, 80%, 85%, 90%, 95%, or99% of said largest linear dimension. That is, the above definedcharacteristics preferably extend over the majority or substantially allof the polycrystalline CVD diamond wafer.

The polycrystalline CVD diamond wafer may have at least one lineardimension, but preferably at least two orthogonal linear dimensions,equal to or greater than 70 mm, 80 mm, 90 mm, 100 mm, 110 mm, 120 mm,125 mm, 130 mm, 135 mm, or 140 mm. For example, the polycrystalline CVDdiamond wafer may be in the form of a substantially circular disk havinga diameter corresponding to said dimensions. The thickness of thepolycrystalline CVD diamond wafer may be equal to or greater than 1.3mm, 1.5 mm, 1.7 mm, 1.8 mm, 1.9 mm, 2.0 mm, 2.2 mm, 2.5 mm, 2.75 mm, or3.0 mm.

The polycrystalline CVD diamond wafer may also be processed to have asurface roughness no more than 200 nm, 150 nm, 100 nm, 80 nm, 60 nm, or40 nm. Furthermore, an antireflective or diffractive structure may beformed in or on a surface of the polycrystalline CVD diamond wafer.

For certain application it is desirable to process the polycrystallineCVD diamond wafer to form a lens. A convex surface may be formed on oneside of the wafer (i.e. a single convex lens) or on both sides of thewafer (i.e. a double convex lens). In order to achieve a suitable radiusof curvature for the lens in combination with a relatively largediameter then it is required that the polycrystalline CVD diamond waferis fabricated to be sufficiently thick. When the polycrystalline CVDdiamond wafer is in the form of a lens, at least a thickest portion ofthe lens may have a thickness equal to or greater than 1.3 mm, 1.5 mm,1.7 mm, 1.8 mm, 1.9 mm, 2.0 mm, 2.2 mm, 2.5 mm, 2.75 mm, or 3.0 mm. Assuch, embodiments of the present invention enable such large lensstructures to be fabricated in high quality optical gradepolycrystalline CVD diamond material.

The polycrystalline CVD diamond wafer may be used in large area form orotherwise may be cut into smaller items depending on the endapplication.

Measurement Techniques Absorption Coefficient

Laser calorimetry is the method of choice for measuring the absorptanceof low loss materials and optical components. Details of thismeasurement can be found in Test method for absorptance of optical lasercomponents ISO/FDIS 11551, International Organisation forStandardisation, Geneva (1995) and G. Turri et al, Optical absorption,depolarization, and scatter of epitaxial single-crystalchemical-vapor-deposited diamond at 1.064 μm, Optical Engineering 46(6),064002 (2007). Laser calorimetry involves measuring the time-dependentrise and fall in temperature of a test specimen exposed to a laser ofknown power for a fixed time period. From an analysis of the temperatureresponse of the specimen, the absorbance A can be determined, where A isdefined as the fraction of incident laser power absorbed by thespecimen. When the product of the absorption coefficient α with thesample thickness d is much less than unity, then α≈A/d. Thisapproximation is reasonable for optical quality polycrystalline diamond.In addition, optical quality polycrystalline diamond is commonly usedfor CO₂ laser optics operating at 10.6 μm. Performing the lasercalorimetry measurement using the 10.6 μm line of a CO₂ laser istherefore particularly appropriate for the present invention. Testspecimens for calorimetry are prepared as follows. Firstly the growthand nucleation faces of the wafer are lapped and polished to a uniform,desired thickness. A minimum of 20 μm is polished off the nucleationface in order to remove any contamination which may have incorporatedduring the nucleation stage of synthesis. Secondly, a series ofcalorimetry test specimens are laser machined from the polished wafer.These specimens are further polished on both sides to an rms roughnessof <15 nm.

Dielectric Loss

The dielectric loss coefficient tan 6 of the material is measured usingan open resonator technique. The resonator is characterized by a veryhigh unloaded Q-factor, typically >100 000, and operates in a highlypolarised TEM_(00n) mode, where n denotes the number of half guidedwavelengths between the two reflectors. Sample thickness must becontrolled such that it is ideally of an integral number of halfwavelengths in thickness at the measurement frequency. This technique isdescribed in “Properties of bulk polycrystalline CVD diamond”, bySussmann et al, Diamond and related materials, 3 (1994) 303-312.

Tensile Strength

Strength testing of materials can be performed using differenttechniques, all of which have their advantages and disadvantages. Theseare well-known to persons skilled in the art. One method of testing forstrength is the so-called 3-point bend test. The application of thistechnique to polycrystalline diamond specimens is detailed inPhilosophical Magazine Vol. 83, No. 36, 4059-4070 (2003), Strength offree-standing chemically vapour-deposited diamond measured by a range oftechniques, A. R. Davies, J. E. Field, C. S. J. Pickles. An as-grown CVDwafer is prepared for 3-point bend strength testing as follows. First,the growth and nucleation faces of the wafer are lapped and polished toa uniform, desired thickness. A minimum of 20 μm is polished off thenucleation face in order to remove any contamination which may have beenincorporated during the nucleation stage of synthesis. Secondly, aseries of 40 rectangular strength test specimens of lateral dimension 18mm×2 mm are laser machined from the polished wafer. These specimens areextracted from across the entire wafer in order to provide an evensampling. The 3-point bend test is performed on a first 20 samples inwhich the nucleation face is in tension and a second 20 samples in whichthe growth face is in tension. The mean strength of the nucleation andgrowth faces is determined by calculating the arithmetic mean of eachsample set.

Black Spots

Optical microscopy is used for the analysis of black spots. Opticalmicroscopy of polycrystalline diamond samples in general reveals thepresence of microscopic crack-like features (termed “black spots”)formed during synthesis within individual grains, which are mostprobably a result of inter-grain stress. These spots have diverseshapes, however typically have a radius of approximately 50-100 micron,and have been shown to have a negative impact upon certain physicalproperties of the film. Black spots can be inspected under a ×50microscope.

Integrated Absorption

Integrated absorption per unit thickness of the sample is measured usingan FTIR spectrometer. The absorption associated with stretch modes ofCH_(x) species within the film lies between 2760 cm⁻¹ to 3030 cm⁻¹. Thisabsorption was measured at room temperature, using an aperture size of 5mm in an FTIR spectrometer scanning between 400 cm⁻¹ and 4000 cm⁻¹. Alinear baseline is subtracted from the peak before the integrated areais calculated. The technique is described in “Thermal conductivitymeasurements on CVD diamond”, by Twitchen et al, Diamond and relatedmaterials, 10 (2001) 731-735.

Thermal Conductivity

Thermal conductivity is measured in thick diamond wafers using theproven relationship between thermal conductivity and the CHx componentof the FTIR absorption spectrum. This relationship is described in“Thermal conductivity measurements on CVD diamond”, by Twitchen et al,Diamond and related materials, 10 (2001) 731-735. The integrated area ofthe CHx components in the region 2760 cm⁻¹ to 3030 cm⁻¹ of the IRspectrum of the diamond window, once corrected with a linear baseline,has been shown to be quantitatively related to the thermal conductivityof diamond.

Optical Scatter

Total integrated scatter in the forward direction is measured using aso-called Coblentz sphere capable of collecting forward scattered lightat an angle ≧2.5° with respect to the incident light beam. The techniqueis described in J. C. Stover, Optical Scattering: Measurement andAnalysis, SPIE Press Monograph (1995). The 10.6 μm line of a CO₂ laseris used for these measurements. Test specimens for scatter measurementsare prepared as follows. Firstly the growth and nucleation faces of thewafer are lapped and polished to a uniform, desired thickness. A minimumof 20 μm is polished off the nucleation face in order to remove anycontamination which may have incorporated during the nucleation stage ofsynthesis. Secondly, a series of test specimens are laser machined fromthe polished wafer. These specimens are further polished on both sidesto an rms roughness of <15 nm.

Example

A 120 mm diameter refractory metal carbide forming substrate suitablefor synthesising polycrystalline CVD wafers was prepared using standardlapping and polishing processes to produce a surface with an R_(a) of20-60 nm.

This substrate was introduced into a CVD reactor, and the synthesisprocess started. Reaction gases were flowed into the reactor at flows of3500/43/43 seem for Hydrogen/Methane/Argon. A controlled level ofnitrogen was introduced to provide a concentration in the gas phase of150 ppb, as quantified by optical emission spectroscopy.

The pressure in the chamber was kept at 185 Torr and the meantemperature of the substrate was adjusted to be 830° C. and was held atthis point through the course of the growth run. The difference insubstrate temperature from centre to edge was maintained at less than30° C.

The synthesis process was terminated following a minimum diamond waferdeposition thickness of 1.9 mm. The diamond wafer was removed from thesubstrate. A 30 μm thick layer was lapped off the nucleation face. Thegrowth face was lapped to produce a substantially flat wafer of averagethickness 1.7 mm. From this, four 20 mm diameter test samples were lasercut for laser calorimetry measurement at 10.6 μm, extracted according toFIG. 7.

The four test samples were further polished on both sides to an rmsroughness <15 nm with minimal removal of material. The mean absorptioncoefficient α at 10.6 μm for each of these four test samples wasdetermined to be less than 0.2 cm′. Further measurements have been takenin accordance with the previously described measurement techniques andfall within the numerical ranges as defined in the product section.

While this invention has been particularly shown and described withreference to preferred embodiments, it will be understood to thoseskilled in the art that various changes in form and detail may be madewithout departing from the scope of the invention as defined by theappendant claims.

1. A polycrystalline chemical vapour deposited (CVD) diamond wafercomprising: a largest linear dimension equal to or greater than 70 mm; athickness equal to or greater than 1.3 mm; and one or both of thefollowing characteristics measured at room temperature (nominally 298 K)over at least a central area of the polycrystalline CVD diamond wafer,said central area being circular, centred on a central point of thepolycrystalline CVD diamond wafer, and having a diameter of at least 70%of the largest linear dimension of the polycrystalline CVD diamondwafer: an absorption coefficient 0.2 cm⁻¹ at 10.6 μm; and a dielectricloss coefficient at 145 GHz, of tan δ≦2×10⁻⁴.
 2. A polycrystalline CVDdiamond wafer according to claim 1, wherein the polycrystalline CVDdiamond wafer further comprises one or more of the followingcharacteristics over at least the central area: a tensile rupturestrength with a nucleation face of the polycrystalline CVD diamond waferin tension of: ≧760 MPa×n for a thickness of 200 to 500 μm; ≧700 MPa×nfor a thickness of 500 to 750 μm; ≧650 MPa×n for a thickness of 750 to1000 μm; ≧600 MPa×n for a thickness of 1000 to 1250 μm; ≧550 MPa×n for athickness of 1250 to 1500 μm; ≧500 MPa×n for a thickness of 1500 to 1750μm; ≧450 MPa×n for a thickness of 1750 to 2000 μm; or ≧400 MPa×n for athickness of ≧2000 μm, wherein multiplying factor n is 1.0, 1.1, 1.2,1.4, 1.6, 1.8, or 2; a tensile rupture strength with a growth face ofthe polycrystalline CVD diamond wafer in tension of: ≧330 MPa×n for athickness of 200 to 500 μm; ≧300 MPa×n for a thickness of 500 to 750 μm;≧275 MPa×n for a thickness of 750 to 1000 μm; ≧250 MPa×n for a thicknessof 1000 to 1250 μm; ≧225 MPa×n for a thickness of 1250 to 1500 μm; ≧200MPa×n for a thickness of 1500 to 1750 μm; ≧175 MPa×n for a thickness of1750 to 2000 μm; or 150 MPa×n for a thickness of 2000 μm, whereinmultiplying factor n is 1.0 1.1, 1.2, 1.4, 1.6, 1.8, or 2; a surfaceflatness ≦5 μm, ≦4 μm, ≦3 μm, ≦2 μm, ≦1 μm, ≦0.5 μm, ≦0.2 μm, ≦ or 0.1μm.
 3. A polycrystalline CVD diamond wafer according to claim 1, whereinthe polycrystalline CVD diamond wafer further comprises one or more ofthe following characteristics over at least the central area: an averageblack spot density no greater than 1 mm⁻², 0.5 mm⁻², or 0.1 mm⁻²; ablack spot distribution such that there are no more than 4, 3, 2, or 1black spots within any 3 mm² area; an integrated absorbance per unitthickness of no more than 0.20 cm⁻², 0.15 cm⁻², 0.10 cm⁻², or 0.05 cm⁻²,when measured with a corrected linear background in a range 2760 cm⁻¹ to3030 cm⁻¹; a thermal conductivity of no less than 1900 Wm⁻¹K⁻¹, 2000Wm⁻¹K⁻¹, 2100 Wm⁻¹K⁻¹, or 2200 Wm⁻¹K⁻¹; a total integrated scatter in aforward hemisphere no more than 1%, 0.5%, or 0.1% at 10.6 μm for asample thickness of 0.7 mm with front and rear surfaces polished to aroot mean squared roughness of less than 15 nm; and a siliconconcentration as measured by secondary ion mass spectrometry of no morethan 10¹⁷ cm⁻³, 5×10¹⁶ cm⁻³, 10¹⁶ cm⁻³, 5×10¹⁵ cm⁻³, or 10¹⁵ cm⁻³.
 4. Apolycrystalline CVD diamond wafer according to claim 1, wherein thepolycrystalline CVD diamond wafer comprises two, three, four, five, six,seven, eight, nine, ten or all eleven of said characteristics.
 5. Apolycrystalline CVD diamond wafer according to claim 1, wherein thelargest linear dimension is equal to or greater than 80 mm, 90 mm, 100mm, 110 mm, 120 mm, 125 mm, 130 mm, 135 mm, or 140 mm.
 6. Apolycrystalline CVD diamond wafer according to claim 1, wherein thediameter of the central area is at least 75%, 80%, 85%, 90%, 95%, or 99%of said largest linear dimension.
 7. A polycrystalline CVD diamond waferaccording to claim 1, wherein the polycrystalline CVD diamond wafercomprises at least two orthogonal linear dimensions equal to or greaterthan 70 mm, 80 mm, 90 mm, 100 mm, 110 mm, or 120 mm.
 8. Apolycrystalline CVD diamond wafer according to claim 1, wherein thethickness is equal to or greater than 1.5 mm, 1.7 mm, 1.8 mm, 1.9 mm,2.0 mm, 2.2 mm, 2.5 mm, 2.75 mm, or 3.0 mm.
 9. A polycrystalline CVDdiamond wafer according to claim 1, wherein the absorption coefficientmeasured at room temperature is ≦0.1 cm⁻¹ or ≦0.05 cm⁻¹ at 10.6 μm. 10.A polycrystalline CVD diamond wafer according to claim 1, wherein thedielectric loss coefficient tan δ measured at room temperature at 145GHz is ≦10⁻⁴, ≦5×10⁻⁵, 10⁻⁵, ≦5×10⁻⁶, or ≦10⁻⁶.
 11. A polycrystallineCVD diamond wafer according to claim 1, wherein the polycrystalline CVDdiamond wafer has an oxygen terminated surface.
 12. A polycrystallineCVD diamond wafer according to claim 1, wherein a surface roughness ofthe polycrystalline CVD diamond wafer is no more than 200 nm, 150 nm,100 nm, 80 nm, 60 nm, or 40 nm.
 13. A polycrystalline CVD diamond waferaccording to claim 1, wherein an antireflective or diffractive structureis formed in or on a surface of the polycrystalline CVD diamond wafer.14. A polycrystalline CVD diamond wafer according to claim 1, whereinthe wafer is in the form of a lens and wherein at least a thickestportion of the lens has a thickness equal to or greater than 1.3 mm, 1.5mm, 1.7 mm, 1.8 mm, 1.9 mm, 2.0 mm, 2.2 mm, 2.5 mm, 2.75 mm, or 3.0 mm.15. A polycrystalline CVD diamond wafer according to claim 14, whereinthe lens is a single or double convex lens.